 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SI4401DY New Product Vishay Siliconix P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -40 0.0225 @ VGS = -4.5 V -8.7 rDS(on) (W) 0.0155 @ VGS = -10 V ID (A) -10.5 SSS SO-8 S S S G 1 2 3 4 Top View DDDD P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C ID TA = 70_C IDM IS -2.7 3.0 1.9 -55 to 150 -8.3 -50 -1.36 1.5 0.95 W _C -5.9 A Symbol VDS VGS 10 secs Steady State -40 "20 Unit V -10.5 -8.7 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71226 S-03452--Rev. C, 09-Apr-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 33 70 16 Maximum 42 84 21 Unit _C/W C/W 1 SI4401DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -32 V, VGS = 0 V VDS = -32 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -10.5 A VGS = -4.5 V, ID = -8.7 A VDS = -15 V, ID = -10.5 A IS = -2.7 A, VGS = 0 V -30 0.013 0.0185 26 -0.74 -1.1 0.0155 0.0225 -1.0 "100 -1 -10 V nA mA m A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf Rg trr IF = -2.1 A, di/dt = 100 A/ms VDD = -15 V, RL = 15 W ID ^ -1 A, VGEN = -10 V, RG = 6 W VDS = -15 V, VGS = -5 V, ID = -10.5 A 37.5 14.3 10.7 17 18 122 55 3.8 45 30 30 190 85 W ns ns 50 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 5 V 40 I D - Drain Current (A) 4V I D - Drain Current (A) 40 50 Transfer Characteristics 30 30 20 20 TC = 125_C 25_C -55_C 2.5 3.0 3.5 4.0 4.5 10 3V 2V 0 0 2 4 6 8 10 10 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71226 S-03452--Rev. C, 09-Apr-01 www.vishay.com 2 SI4401DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.040 r DS(on) - On-Resistance ( W ) 6500 Ciss Vishay Siliconix Capacitance 0.024 C - Capacitance (pF) 0.032 5200 VGS = 4.5 V VGS = 10 V 3900 0.016 2600 Coss 0.008 1300 Crss 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 10.5 A 8 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 10.5 A r DS(on) - On-Resistance (W) (Normalized) 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 15 30 45 60 75 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.06 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.05 I S - Source Current (A) 0.04 ID = 10.5 A 0.03 TJ = 25_C 0.02 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71226 S-03452--Rev. C, 09-Apr-01 www.vishay.com 3 SI4401DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 100 Single Pulse Power, Junction-to-Ambient 0.6 V GS(th) Variance (V) ID = 250 mA Power (W) 80 0.4 60 0.2 40 0.0 20 -0.2 -0.4 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 70_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71226 S-03452--Rev. C, 09-Apr-01 |
Price & Availability of SI4401DY
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |